2SD2695(2006) 데이터시트 - Toshiba
제조사

Toshiba
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
• Zener diode included between collector and base
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Unspecified
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba