2SD2656T106(2013) 데이터시트 - ROHM Semiconductor
제조사
ROHM Semiconductor
NPN 1A 30V Low Frequency Amplifier Transistors
FEATUREs
1) A Collecotr current is large.General Purpose.
2) Collector saturation voltage is low.
VCE(sat) is Max. 350mV At IC=500mA, IB=25mA
3) Complementary PNP Types : 2SB1694
4) Lead Free/RoHS Compliant.
APPLICATIONs
Driver circuit
Page Link's:
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Midium Power Transistors (30V / 1A)
ROHM Semiconductor
Midium Power Transistors (-30V / -1A)
ROHM Semiconductor
Transistors LOW FREQUENCY POWER AMPLIFIER
SANYO -> Panasonic
Midium Power Transistors (±30V / ±1A)
ROHM Semiconductor
Midium Power Transistors (-30V / -1A) ( Rev : 2010 )
ROHM Semiconductor
100V/120V, 1A Low-Frequency Power Amplifier Applications
SANYO -> Panasonic
NPN Low Frequency Amplifier Transistor
Guilin Strong Micro-Electronics Co., Ltd.
NPN Low Frequency Amplifier Transistor
Guilin Strong Micro-Electronics Co., Ltd.
NPN Low Frequency Amplifier Transistor
Guilin Strong Micro-Electronics Co., Ltd.
NPN Low Frequency Amplifier Transistor
Guilin Strong Micro-Electronics Co., Ltd.
