2SD2397 데이터시트 - Inchange Semiconductor
제조사
Inchange Semiconductor
DESCRIPTION
• High DC Current Gain
: hFE= 1000(Min) @IC= 1A
• Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
• Built-in zener diode between collector and base
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Motor， Relay drive
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
