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2SD2163
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NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)