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2SD2114SW
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ROHM Semiconductor
2SD2114SW 데이터시트 - ROHM Semiconductor
ROHM Semiconductor
Features
1) High DC current gain. hFE= 1200 (Typ.)
2) High emitter-base voltage. VEBO=12V (Min.)
3) Low VCE (sat). VCE (sat)= 0.18V (Typ.)
(IC/ IB= 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
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제조사
High-current Gain Medium Power Transistor (20V, 0.5A) ( Rev : 1996 )
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High-current Gain Medium Power Transistor (20V, 500mA) ( Rev : 2015 )
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High Current Gain Medium Power NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
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