2SD2022 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE = 3000(Min)@ IC= 1A
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
• Incorporating a built-in zener diode
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Low-frequency amplifications.
• Power amplifier applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.