2SD1912 데이터시트 - Inchange Semiconductor
제조사
Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min)
·Wide Area of Safe Operation
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplifier applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
