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2SD1413 PDF
2SD1413 데이터시트 - Shenzhen SPTECH Microelectronics Co., Ltd.
제조사

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A
• High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1023
APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.