2SD1412A 데이터시트 - Toshiba
제조사
Toshiba
High-Current Switching Applications
Power Amplifier Applications
• Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
