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2SC5593 PDF
2SC5593 데이터시트 - Hitachi -> Renesas Electronics
제조사
Hitachi -> Renesas Electronics
Features
• High gain bandwidth product
fT = 23 GHz typ.
• High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
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Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Renesas Electronics
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Hitachi -> Renesas Electronics
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor
