부품명
2SC4781
Other PDF
PDF
page
1 Pages
File Size
89.6 kB
제조사
Toshiba
2SC4781(1997) 데이터시트 - Toshiba
Toshiba
STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
• High DC Current Gain and Excellent hFE Linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: hFE (2) = 300 (Typ.) (VCE = 2 V, IC = 4 A)
• Low Saturation Voltage
: VCE (sat) = 0.5 V (Max.) (IC = 4 A, IB = 80 mA)
부품명
상세내역
보기
제조사
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Share Link: 