2SC4557 데이터시트 - New Jersey Semiconductor
제조사

New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 550V(Min)
• High Switching Speed
• Wide Area of Safe Operation
APPLICATIONS
• Designed for switching regulator and general purpose
applications.
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
Inchange Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor