부품명
2SC4227-R35-A
상세내역
Other PDF
no available.
PDF
page
7 Pages
File Size
82.3 kB
제조사
NEC => Renesas Technology
HOME >>> NEC => Renesas Technology >>> 2SC4227-R35-A PDF
2SC4227-R35-A 데이터시트 - NEC => Renesas Technology
NEC => Renesas Technology
DESCRIPTION
The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.
FEATURES
• Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : |S21e|2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package
부품명
상세내역
보기
제조사
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
California Eastern Laboratories.
Share Link: 