2SC3808 데이터시트 - SANYO -> Panasonic
제조사
SANYO -> Panasonic
High hFE, Low-Frequency General-Purpose Amplifier Applications
FEATUREs
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
· High VEBO(VEBO≥15V).
APPLICATIONs
· Low frequency general-purpose amplifiers, drivers.
Silicon NPN epitaxial planar transistor
Panasonic Corporation
Silicon NPN epitaxial planar transistor
Panasonic Corporation
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor ( Rev : V2 )
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
