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2SC3587
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NEC => Renesas Technology
2SC3587 데이터시트 - NEC => Renesas Technology
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
FEATURES
• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
NF = 2.6 dB TYP. @ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
GA = 8.0 dB TYP. @ f = 4 GHz
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