2SC3052-SOT-23-3L 데이터시트 - Jiangsu Changjiang Electronics Technology Co., Ltd
제조사

Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.15 W (Tamb=25℃)
Collector current
ICM: 0.2 A
Collector-base voltage
V(BR)CBO: 50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ( Rev : 2010 )
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ( Rev : V2 )
Isahaya Electronics
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
Isahaya Electronics