2SC2859-GR 데이터시트 - Toshiba
제조사

Toshiba
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA)
• Complementary to 2SA1182.
SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
Unspecified
SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
Unspecified
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Toshiba
Silicon NPN Epitaxial Type (PCT process) Transistor
Toshiba
Silicon NPN Epitaxial Type (PCT process) Transistor
TY Semiconductor
Silicon NPN Epitaxial Type (PCT process) Transistor
Toshiba
Silicon NPN Epitaxial Type (PCT process) Transistor
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Transistor
Toshiba
SILICON NPN EPITAXIAL TYPE ( PCT PROCESS) TRANSISTOR
Toshiba