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2SC2488
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New Jersey Semiconductor
2SC2488 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SA1064
APPLICATIONS
• Designed for AF amplifier, high power amplifier applications
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