2SC2261 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
DESCRIPTION
• High Power Dissipation- : Pc= 80W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage- :V(BR)CEo=120V(Min.)
• Complement to Type 2SA981
APPLICATIONS
• Designed for general purpose applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
