FEATURES
• Complementary to NEC 2SD596A NPN Transistor.
• High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −30 V
Collector to Emitter Voltage VCEO −25 V
Emitter to Base Voltage VEBO −5.0 V
Collector Current (DC) IC −700 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55 to +150 °C