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2SB552
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New Jersey Semiconductor
2SB552 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO=-180V(Min)
• High Power Dissipation- : Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD552
APPLICATIONS
• High power amplifier applications.
• High power switching applications.
• DC-DC converter and regulator applications.
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