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2SB511
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New Jersey Semiconductor
2SB511 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -35V(Min)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max) @lc= -1.5A
• Complement to Type 2SD325
APPLICATIONS
• Designed for 5W AF power amplifier output applications.
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