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2SB1647 PDF
2SB1647 데이터시트 - Shenzhen SPTECH Microelectronics Co., Ltd.
제조사

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min)
• High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V)
• Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA)
• Complement to Type 2SD2560
APPLICATIONS
• Designed for audio, series regulator and general purpose applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor