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2SB1565
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New Jersey Semiconductor
2SB1565 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V<0RlC(-o= -60V(Mm)
• Collector Power Dissipation-
: Pc 25 W@ Tc= 25T
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Designed for power amplifications.
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