2SB1558 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain- : hFE= 5000(Min)@lc= -7A
• Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -7A
• Complement to Type 2SD2387
APPLICATIONS
• Designed for power amplifier applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
