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2SB1556
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Toshiba
2SB1556 데이터시트 - Toshiba
Toshiba
Power Amplifier Applications
• High breakdown voltage: VCEO = −140 V (min)
• Complementary to 2SD2385
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제조사
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1999 )
Toshiba
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