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2SB1346
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New Jersey Semiconductor
2SB1346 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2027
APPLICATIONS
• Designed for low frequency and general purpose
amplifier applications.
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