2SB1253 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain- : hFE= 5000(Min)@IC= -5A
• Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A
• Complement to Type 2SD1893
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for power amplifier applications
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor