2SB1237(1996) 데이터시트 - ROHM Semiconductor
제조사
ROHM Semiconductor
Features
1) Low VCE(sat).
VCE(sat) = −0.2V(Typ.)
(IC/IB= −500mA / −50mA)
2) Compliments 2SD1664 /
2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
Medium Power Transistor (−32V, −1A)
ROHM Semiconductor
Medium Power Transistor (-32V, -1A)
ROHM Semiconductor
Medium Power Transistor(32V,1A)
Galaxy Semi-Conductor
Medium Power Transistor (32V, 1A) ( Rev : 1996 )
ROHM Semiconductor
Medium Power Transistor (32V, 1A)
ROHM Semiconductor
Medium Power Transistor (32V, 800mA) ( Rev : 2015 )
ROHM Semiconductor
Medium Power Transistor (32V, 0.8A)
First Silicon Co., Ltd
Medium Power Transistor (32V, 0.8A)
Leshan Radio Company,Ltd
Medium Power Transistor (-32V,-500mA) ( Rev : 2015 )
ROHM Semiconductor
Medium power transistor (-32V, -2A)
ROHM Semiconductor
