2SB1188T100P 데이터시트 - ROHM Semiconductor
제조사

ROHM Semiconductor
Medium power transistor (−32V, −2A)
FEATUREs
1) Low VCE(sat).
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 / 2SD1758 / 2SD1862
Structure
Epitaxial planar type
PNP silicon transistor
Medium power transistor(-32V,-2A)
Galaxy Semi-Conductor
Medium power transistor (32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A) ( Rev : RevA )
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (-32V, -2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (32V, 2A) ( Rev : 2009 )
ROHM Semiconductor
Medium power Transistor(32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (32V, 2A)
ROHM Semiconductor