2SA812 데이터시트 - NEC => Renesas Technology
제조사
NEC => Renesas Technology
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) )
• High Voltage: VCEO= −50 V
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
