2SA2060(2013) 데이터시트 - Toshiba
제조사
Toshiba
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.3 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)
• High-speed switching: tf = 90 ns (typ.)
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2002 )
Toshiba
