2SA1934 데이터시트 - Toshiba
제조사

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High-Current Switching Applications
DC-DC Converter Applications
• Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −3 A)
• High-speed switching: tstg= 1.0 μs (typ.)
• Complementary to 2SC5176
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Silicon Transistor PNP Epitaxial Type (PCT process)
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR ( Rev : 1996 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba