2SA1296 데이터시트 - Toshiba
제조사

Toshiba
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat)= −0.5 V (max) @IC= −2 A
• Complementary to 2SC3266.
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Silicon Transistor PNP Epitaxial Type (PCT process)
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Silicon PNP Epitaxial Type (PCT Process) Transistor
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Silicon PNP Epitaxial Type (PCT Process) Transistor
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR ( Rev : 1996 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba