2N7002T 데이터시트 - Transys Electronics Limited
제조사
Transys Electronics Limited
FEATURES
Power dissipation
PD: 0.15 W (Tamb=25℃)
Collector current
ID: 115 mA
Collector-base voltage
VDS: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
