2N6845 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS -100V
ID(cont) -4.0A
RDS(on) 0.60Ω
FEATURES
• HERMETICALLY SEALED TO-39 METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Silicon Standard Corp.
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
