High Voltage NPN Silicon Power Transistors

These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features

• High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250 Vdc (Min)
• Excellent DC Current Gain − hFE = 10−75 @ IC = 2.5 Adc
• Low Collector−Emitter Saturation Voltage @ IC = 2.5 Adc − VCE(sat) = 1.0 Vdc (Max)
• Pb−Free Packages are Available*