2N5401S(1998) 데이터시트 - KEC
제조사
KEC
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
• High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V
• Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V
• Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA
• Low Noise : NF=8dB (Max.)
PNP Epitaxial Planar Transistor
Cystech Electonics Corp.
PNP Epitaxial Planar Transistor ( Rev : 2011 )
Formosa Technology
PNP Epitaxial Planar Transistor
Cystech Electonics Corp.
PNP Epitaxial Planar Transistor
First Components International
PNP EPITAXIAL PLANAR TRANSISTOR
Hi-Sincerity Microelectronics
PNP EPITAXIAL PLANAR TRANSISTOR
Unisonic Technologies
PNP EPITAXIAL PLANAR TRANSISTOR
Weitron Technology
PNP EPITAXIAL PLANAR TRANSISTOR
Hi-Sincerity Mocroelectronics
PNP EPITAXIAL PLANAR TRANSISTOR
Hi-Sincerity Microelectronics
PNP EPITAXIAL PLANAR TRANSISTOR
Hi-Sincerity Mocroelectronics
