2N2193A 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS
● High Breakdown Voltage Combined With Very-Low Saturation Voltage
● DC Beta - Guaranteed From 100 μa to 1 amp
P-N-P EPITAXIAL PLANAR SILICON TRANSISTORS
New Jersey Semiconductor
P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTORS
New Jersey Semiconductor
N-P-N EPITAXIAL PLANAR SILICON TRANSSTOR
New Jersey Semiconductor
N-P-N EPITAXIAL PLANAR SILICON TRANSISTOR
New Jersey Semiconductor
High-Speed Epitaxial-Collector Silicon N-P-N Planar Transistors
GE Solid State
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
New Jersey Semiconductor
P-N PLANAR UNIJUNCTION SILICON TRANSISTORS
New Jersey Semiconductor
Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors ( Rev : V2 )
New Jersey Semiconductor
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
GE Solid State
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
Intersil
