Features
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
• Negative VS transient voltage immunity of -100 V
• Floating channel designed for bootstrap operation
• Operating voltages (VS node) up to + 650 V
• Maximum bootstrap voltage (VB node) of + 675 V
• Integrated ultra-fast, low resistance bootstrap diode
• Logic operational up to –11 V on VS Pin
• Negative voltage tolerance on inputs of –5 V
• Independent under voltage lockout for both channels
• Schmitt trigger inputs with hysteresis
• 3.3 V, 5 V and 15 V input logic compatible
• Maximum supply voltage of 25 V
• DSO-8 package
• RoHS compliant

Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
• Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
• Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP™ family IGBTs or their equivalent power stages
• Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS™ MOSFETs or their equivalent power stages
• Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series
• High power LED and HID lighting having CoolMOS™ super junction MOSFETs
• Electric vehicle (EV) charging stations and battery management systems
• Driving 650 V SiC MOSFETs in above applications