1SS373(2000) 데이터시트 - Toshiba
제조사
Toshiba
High Speed Switching Application
● Small package
● Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2014 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
