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1N6469US 데이터시트 - Microsemi Corporation

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1N6469US

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  2004  

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Microsemi
Microsemi Corporation 

DESCRIPTION
This surface mount series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6 Volts with 1500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These devices are also available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages.


FEATURES
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits
• Triple-layer passivation
• Internal “Category I” metallurgical bonds
• Voidless hermetically sealed glass package
• JAN/TX/TXV military qualifications available per MIL-PRF-19500/552 by adding JAN, JANTX, or JANTXV prefix
• Further options for screening in accordance with MIL-PRF-19500 for JANS by using a “SP” prefix, e.g. SP6469, SP6476, etc.
• Axial-leaded equivalents are also available (see separate data sheet for 1N6469 thru 1N6476)


APPLICATIONS / BENEFITS
• Military and other high reliability transient protection
• Extremely robust construction
• Working Peak “Standoff” Voltage (VWM) from 5.0 to 51.6 V
• Available as 1500 W Peak Pulse Power (PPP)
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
• Secondary lightning protection per select levels in IEC61000-4-5
• Square-end-cap terminals for easy mounting
• Nonsensitive to ESD per MIL-STD-750 Method 1020
• Inherently radiation hard as described in Microsemi MicroNote 050

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