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1N6309US
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Compensated Devices => Microsemi
1N6309US 데이터시트 - Compensated Devices => Microsemi
Compensated Devices => Microsemi
• AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
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