부품명
1N5819W
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제조사
Xian Semipower Electronic Technology Co., Ltd.
1N5819W 데이터시트 - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
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제조사
Schottky Barrier Rectifiers
( Rev : V2 )
Shenzhen Luguang Electronic Technology Co., Ltd
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