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1N4001S
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Taiwan Memory Technology
1N4001S 데이터시트 - Taiwan Memory Technology
Taiwan Memory Technology
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
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제조사
1A, 50V - 1000V Silicon Rectifiers ( Rev : V_F15 )
Shenzhen Luguang Electronic Technology Co., Ltd
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