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150N10F7AG
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150N10F7AG 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Designed for automotive application
• Standard level VGS(TH)
• 175°C junction temperature
• 100% avalanche rated
APPLICATIONs
• Switching applications
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N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package
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N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
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N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
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