C1061 데이터 시트보기 (PDF) - Wing Shing International Group

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C1061

NPN EPITAXIAL SILICON TRANSISTOR

Wing Shing International Group 

2SC1061

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

! Complement to 2SA671

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

50

50

7

3

25

150

-50~150

Unit

V

V

V

A

W

℃

℃

TO-220

ELECTRICAL CHARACTERISTICS (TA=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

ICBO

IEBO

hFE1

VCE(sat)

fT

Test Condition

Min Typ

VCB= 50V , IE=0

VEB= 7V , IC=0

VCE= 4V , IC=1A

35

IC=3A , IB=0.3A

VCE= 5V , IC=0.5A

8

Max

100

100

200

1.0

Unit

µA

µA

V

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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