BSH103 데이터 시트보기 (PDF) - Philips Electronics
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BSH103 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
QG
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Switching times
td(on)
turn-on delay time
tf
fall time
ton
turn-on switching time
td(off)
turn-off delay time
tr
rise time
toff
turn-off switching time
Source-drain diode
VSD
source-drain diode forward
voltage
trr
reverse recovery time
CONDITIONS
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±8 V; VDS = 0
VGS = 4.5 V; ID = 0.5 A
VGS = 2.5 V; ID = 0.5 A
VGS = 1.8 V; ID = 0.25 A
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 4.5 V; VDD = 15 V;
ID = 0.5 A; Tamb = 25 °C
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
VGD = 0; IS = 0.5 A
IS = 0.5 A; di/dt = −100 A/µs
MIN.
30
0.4
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
83
27
14
2 100
MAX. UNIT
−
V
−
V
100 nA
±100 nA
0.4 Ω
0.5 Ω
0.6 Ω
−
pF
−
pF
−
pF
−
pC
−
95
−
pC
−
670 −
pC
−
2.5
−
ns
−
3.5
−
ns
−
6
−
ns
−
20
−
ns
−
7
−
ns
−
27
−
ns
−
−
1
V
−
25
−
ns
1998 Feb 11
5
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