P8NK80ZFP(2003) 데이터 시트보기 (PDF) - STMicroelectronics
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P8NK80ZFP
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
P8NK80ZFP Datasheet PDF : 11 Pages
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STP8NK80Z - STP8NK80ZFP - STW8NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5 KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤6.2A, di/dt ≤200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP8NK80Z - STW8NK80Z
800
800
± 30
6.2
3.9
24.8
140
1.12
4000
4.5
-
-55 to 150
STP8NK80ZFP
6.2 (*)
3.9 (*)
24.8 (*)
30
0.24
2500
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering Purpose
TO-220
TO-220FP
0.89
4.2
62.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Max Value
6.2
300
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
BVGSO Gate-Source Breakdown Voltage Igs=± 1 mA (Open Drain)
30
TO-247
0.89
50
°C/W
°C/W
°C
Unit
A
mJ
Max. Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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