P60NF06 데이터 시트보기 (PDF) - STMicroelectronics

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P60NF06

N-channel 60V - 0.014Ω- 60A TO-220 STripFET II™ Power MOSFET

STMicroelectronics 

STP60NF06

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 60A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 60A, VDD=30V

di/dt = 100A/µs, Tj = 150°C

(see Figure 13)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min Typ. Max Unit

60 A

240 A

1.3 V

70

ns

185

nC

5

A

5/12

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